CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  50A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 650V 50A (TC) 227W (TC) SURFACE MOUNT PG-TO263-3

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  107NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4340PF @ 400V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPB60R040C7ATMA1

MANUFACTURER STANDARD LEAD TIME:  22 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-4, D²PAK (3 LEADS + TAB), TO-263AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  227W (TC)

RDS ON (MAX) @ ID, VGS:  40 MOHM @ 24.9A, 10V

SERIES:  COOLMOS? C7

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  PG-TO263-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 1.24MA