CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  23.8A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 600V 23.8A (TC) 176W (TC) SURFACE MOUNT PG-TO263-2

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  75NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1660PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPB60R160C6ATMA1

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  176W (TC)

RDS ON (MAX) @ ID, VGS:  160 MOHM @ 11.3A, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  PG-TO263-2

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.5V @ 750ΜA