CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  60A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 100V 60A (TC) 94W (TC) SURFACE MOUNT PG-TO252-3-313

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  49NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3170PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPD60N10S4L12ATMA1

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  94W (TC)

RDS ON (MAX) @ ID, VGS:  12 MOHM @ 60A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101, HEXFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  PG-TO252-3-313

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±16V

VGS(TH) (MAX) @ ID:  2.1V @ 46ΜA