CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10.1A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

FET FEATURE:  SUPER JUNCTION

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  23NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  440PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPD65R650CEATMA1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER - MAX:  28W

RDS ON (MAX) @ ID, VGS:  650 MOHM @ 2.1A, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  PG-TO252-3

VGS(TH) (MAX) @ ID:  3.5V @ 0.21MA