CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  7A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 7A (TC) 86W (TC) SURFACE MOUNT PG-TO252-3

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  23NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  440PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPD65R650CEAUMA1

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  86W (TC)

RDS ON (MAX) @ ID, VGS:  650 MOHM @ 2.1A, 10V

SERIES:  COOLMOS? CE

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  PG-TO252-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.5V @ 210ΜA