CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 650V 6A (TC) 62.5W (TC) SURFACE MOUNT PG-TO252-3

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  22NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  615PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPD65R660CFDBTMA1

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  62.5W (TC)

RDS ON (MAX) @ ID, VGS:  660 MOHM @ 2.1A, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  PG-TO252-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4.5V @ 200ΜA

ALTERNATE PARTS:  IPD65R600E6ATMA1