IPI041N12N3GAKSA1

Factory Authorized Line

INFINEON TECHNOLOGIES

Electronic Component

IPI041N12N3GAKSA1

N-CHANNEL 120V 120A (TC) 300W (TC) THROUGH HOLE PG-TO262-3
Call for availability INFINEON TECHNOLOGIES
Mfr Part # IPI041N12N3GAKSA1
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-262-3 LONG LEADS, I²PAK, TO-262AAPACKAGING:  TUBESTANDARD PACKAGE:  500SUPPLIER DEVICE PACKAGE:  PG-TO262-3
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  120A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 120V 120A (TC) 300W (TC) THROUGH HOLE PG-TO262-3

DRAIN TO SOURCE VOLTAGE (VDSS):  120V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  211NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  13800PF @ 60V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPI041N12N3GAKSA1

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-262-3 LONG LEADS, I²PAK, TO-262AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  300W (TC)

RDS ON (MAX) @ ID, VGS:  4.1 MOHM @ 100A, 10V

SERIES:  OPTIMOS?

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  PG-TO262-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 270ΜA