CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  80A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 80A (TC) 125W (TC) THROUGH HOLE PG-TO262-3

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  55NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3980PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPI086N10N3GXKSA1

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-262-3 LONG LEADS, I²PAK, TO-262AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  125W (TC)

RDS ON (MAX) @ ID, VGS:  8.6 MOHM @ 73A, 10V

SERIES:  OPTIMOS?

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  PG-TO262-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.5V @ 75ΜA