CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  7A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  23NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  440PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IPL65R660E6AUMA1

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  4-POWERTSFN

PACKAGING:  REEL

POWER - MAX:  63W

RDS ON (MAX) @ ID, VGS:  660 MOHM @ 2.1A, 10V

SERIES:  COOLMOS? E6

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  THIN-PAK (8X8)

VGS(TH) (MAX) @ ID:  3.5V @ 200ΜA