AVALANCHE ENERGY RATING (EAS):  8 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  500 V

DRAIN CURRENT-MAX (ID):  12 A

DRAIN-SOURCE ON RESISTANCE-MAX:  500 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-204AA

JESD-30 CODE:  O-MBFM-P2

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  IRF450PBF

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  2

OPERATING MODE:  ENHANCEMENT MODE

PACKAGE BODY MATERIAL:  METAL

PACKAGE DESCRIPTION:  FLANGE MOUNT, O-MBFM-P2

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  FLANGE MOUNT

PEAK REFLOW TEMPERATURE (CEL):  260

POLARITY/CHANNEL TYPE:  N-CHANNEL

PULSED DRAIN CURRENT-MAX (IDM):  48 A

QUALIFICATION STATUS:  NOT QUALIFIED

SURFACE MOUNT:  NO

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  PIN/PEG

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  40

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON