CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  900MA (TA)

DETAILED DESCRIPTION:  N-CHANNEL 150V 900MA (TA) 2W (TA) SURFACE MOUNT MICRO6?(TSOP-6)

DRAIN TO SOURCE VOLTAGE (VDSS):  150V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.8NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  88PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF5802TRPBF

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-23-6 THIN, TSOT-23-6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2W (TA)

RDS ON (MAX) @ ID, VGS:  1.2 OHM @ 540MA, 10V

SERIES:  HEXFET®

SIMULATION MODELS:  IRF5802TR SABER MODELIRF5802TR SPICE MODEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  MICRO6?(TSOP-6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5.5V @ 250ΜA