CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  12A (TA), 55A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

EXPANDED DESCRIPTION:  N-CHANNEL 30V 12A (TA), 55A (TC) 2.2W (TA), 42W (TC) SURFACE MOUNT DIRECTFET? SQ

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  17.5NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1460PF @ 15V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF6621TRPBF

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  DIRECTFET? ISOMETRIC SQ

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.2W (TA), 42W (TC)

RDS ON (MAX) @ ID, VGS:  9.1 MOHM @ 12A, 10V

SERIES:  HEXFET®

STANDARD PACKAGE:  4,800

SUPPLIER DEVICE PACKAGE:  DIRECTFET? SQ

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2.25V @ 250ΜA