CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.2A (TA), 19A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 4.2A (TA), 19A (TC) 2.2W (TA), 42W (TC) SURFACE MOUNT DIRECTFET? SH

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  13NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  530PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF6665TRPBF

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  DIRECTFET? ISOMETRIC SH

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.2W (TA), 42W (TC)

RDS ON (MAX) @ ID, VGS:  62 MOHM @ 5A, 10V

SERIES:  HEXFET®

STANDARD PACKAGE:  4,800

SUPPLIER DEVICE PACKAGE:  DIRECTFET? SH

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA