CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  61A (TA), 270A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 61A (TA), 270A (TC) 4.3W (TA), 83W (TC) SURFACE MOUNT DIRECTFET L6

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  96NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  6500PF @ 13V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF6718L2TRPBF

MANUFACTURER STANDARD LEAD TIME:  16 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  DIRECTFET? ISOMETRIC L6

PACKAGING:  REEL

POWER DISSIPATION (MAX):  4.3W (TA), 83W (TC)

RDS ON (MAX) @ ID, VGS:  0.7 MOHM @ 61A, 10V

SERIES:  HEXFET®

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  DIRECTFET L6

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.35V @ 150ΜA