CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  19A (TA), 74A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 25V 19A (TA), 74A (TC) 2.1W (TA), 32W (TC) SURFACE MOUNT DIRECTFET? SQ

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  17NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1590PF @ 13V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF6811STRPBF

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  DIRECTFET? ISOMETRIC SQ

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.1W (TA), 32W (TC)

RDS ON (MAX) @ ID, VGS:  3.7 MOHM @ 19A, 10V

SERIES:  HEXFET®

SIMULATION MODELS:  IRF6811STR1PBF SABER MODELIRF6811STR1PBF SPICE MODEL

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  DIRECTFET? SQ

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±16V

VGS(TH) (MAX) @ ID:  2.1V @ 35ΜA