CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  35A (TA), 213A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  25V

EXPANDED DESCRIPTION:  N-CHANNEL 25V 35A (TA), 213A (TC) 2.1W (TA), 78W (TC) SURFACE MOUNT DIRECTFET? MX

FET FEATURE:  SCHOTTKY DIODE (BODY)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  62NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5435PF @ 13V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF6898MTRPBF

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -40°C ~ 150°C (TJ)

PACKAGE / CASE:  DIRECTFET? ISOMETRIC MX

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.1W (TA), 78W (TC)

RDS ON (MAX) @ ID, VGS:  1.1 MOHM @ 35A, 10V

SERIES:  HEXFET®

STANDARD PACKAGE:  4,800

SUPPLIER DEVICE PACKAGE:  DIRECTFET? MX

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2.1V @ 100ΜA