BASE PART NUMBER:  IRF8910PBF

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10A

DETAILED DESCRIPTION:  MOSFET ARRAY 2 N-CHANNEL (DUAL) 20V 10A 2W SURFACE MOUNT 8-SO

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  2 N-CHANNEL (DUAL)

GATE CHARGE (QG) (MAX) @ VGS:  11NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  960PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRF8910TRPBF

MANUFACTURER STANDARD LEAD TIME:  26 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-SOIC (0.154", 3.90MM WIDTH)

PACKAGING:  REEL

POWER - MAX:  2W

RDS ON (MAX) @ ID, VGS:  13.4 MOHM @ 10A, 10V

SERIES:  HEXFET®

SIMULATION MODELS:  IRF8910TRPBF SABER MODELIRF8910TRPBF SPICE MODEL

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  8-SO

VGS(TH) (MAX) @ ID:  2.55V @ 250ΜA

ALTERNATE PARTS:  IRF8910PBF