CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  46A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 250V 46A (TC) 330W (TC) THROUGH HOLE TO-220AB

DRAIN TO SOURCE VOLTAGE (VDSS):  250V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  110NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4560PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRFB4229PBF

MANUFACTURER STANDARD LEAD TIME:  20 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -40°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  330W (TC)

RDS ON (MAX) @ ID, VGS:  46 MOHM @ 26A, 10V

SERIES:  HEXFET®

SIMULATION MODELS:  IRFB4229PBF SABER MODELIRFB4229PBF SPICE MODEL

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-220AB

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA