CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10A (TA), 55A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 10A (TA), 55A (TC) 3.6W (TA), 104W (TC) SURFACE MOUNT PQFN (5X6)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  59NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2570PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRFH5210TRPBF

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERVDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.6W (TA), 104W (TC)

RDS ON (MAX) @ ID, VGS:  14.9 MOHM @ 33A, 10V

ROHS INFORMATION:  PQFN 5X6 ROHS COMPLIANCE

SERIES:  HEXFET®

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  PQFN (5X6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 100ΜA