CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  21A (TA), 40A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 21A (TA), 40A (TC) 2.7W (TA), 37W (TC) SURFACE MOUNT PQFN (3X3)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  2.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  62NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3170PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  IRLHM630TRPBF

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-VQFN EXPOSED PAD

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.7W (TA), 37W (TC)

RDS ON (MAX) @ ID, VGS:  3.5 MOHM @ 20A, 4.5V

SERIES:  HEXFET®

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  PQFN (3X3)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±12V

VGS(TH) (MAX) @ ID:  1.1V @ 50ΜA