CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  80A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 55V 80A (TC) 300W (TC) SURFACE MOUNT PG-TO263-3-2

DRAIN TO SOURCE VOLTAGE (VDSS):  55V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  187NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3660PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  SPB80N06S08ATMA1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  300W (TC)

RDS ON (MAX) @ ID, VGS:  7.7 MOHM @ 80A, 10V

SERIES:  SIPMOS®

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  PG-TO263-3-2

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 240ΜA

ALTERNATE PARTS:  STB80NF55-06T4