ADDITIONAL FEATURE:  AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

AVALANCHE ENERGY RATING (EAS):  256 MJ

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  30 V

DRAIN CURRENT-MAX (ABS) (ID):  50 A

DRAIN CURRENT-MAX (ID):  50 A

DRAIN-SOURCE ON RESISTANCE-MAX:  7 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  TO-252

JESD-30 CODE:  R-PSSO-G4

JESD-609 CODE:  E0

MANUFACTURER:  INFINEON TECHNOLOGIES AG

MANUFACTURER PART NUMBER:  SPD50P03L

MOISTURE SENSITIVITY LEVEL:  1

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PSSO-G4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PART PACKAGE CODE:  TO-252

PEAK REFLOW TEMPERATURE (CEL):  255

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  150 W

PULSED DRAIN CURRENT-MAX (IDM):  200 A

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  TIN/LEAD (SN/PB)

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  SINGLE

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  30

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON