CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  800MA (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 650V 800MA (TC) 11W (TC) THROUGH HOLE PG-TO251-3

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  5NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  100PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  SPU01N60C3

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  11W (TC)

RDS ON (MAX) @ ID, VGS:  6 OHM @ 500MA, 10V

SERIES:  COOLMOS?

STANDARD PACKAGE:  1,500

SUPPLIER DEVICE PACKAGE:  PG-TO251-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.9V @ 250ΜA