CASE CONNECTION:  ISOLATED

CONFIGURATION:  SINGLE

DS BREAKDOWN VOLTAGE-MIN:  200 V

DRAIN CURRENT-MAX (ABS) (ID):  15 A

DRAIN CURRENT-MAX (ID):  15 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

HIGHEST FREQUENCY BAND:  VERY HIGH FREQUENCY BAND

JESD-30 CODE:  R-PDSO-F6

MANUFACTURER:  IXYS CORPORATION

MANUFACTURER PART NUMBER:  DE150-201N09A

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  175 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-F6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

PIN COUNT:  6

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  200 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON