CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  24A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  1000V (1KV)

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 1000V (1KV) 24A (TC) 560W (TC) THROUGH HOLE TO-264AA (IXFK)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  267NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  8700PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  IXYS

MANUFACTURER PART NUMBER:  IXFK24N100

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-264-3, TO-264AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  560W (TC)

RDS ON (MAX) @ ID, VGS:  390 MOHM @ 12A, 10V

SERIES:  HIPERFET?

STANDARD PACKAGE:  25

SUPPLIER DEVICE PACKAGE:  TO-264AA (IXFK)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  5.5V @ 8MA