CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  200A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 70V 200A (TC) 520W (TC) CHASSIS MOUNT SOT-227B

DRAIN TO SOURCE VOLTAGE (VDSS):  70V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  480NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  9000PF @ 25V

MANUFACTURER:  IXYS

MANUFACTURER PART NUMBER:  IXFN200N07

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-227-4, MINIBLOC

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  520W (TC)

RDS ON (MAX) @ ID, VGS:  6 MOHM @ 500MA, 10V

SERIES:  HIPERFET?

SUPPLIER DEVICE PACKAGE:  SOT-227B

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 8MA