CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  65A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  850V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

GATE CHARGE (QG) @ VGS:  230NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  8900PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  IXYS

MANUFACTURER PART NUMBER:  IXFN66N85X

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-227-4, MINIBLOC

PACKAGING:  TUBE

POWER - MAX:  830W

RDS ON (MAX) @ ID, VGS:  65 MOHM @ 33A, 10V

SERIES:  HIPERFET?

STANDARD PACKAGE:  10

SUPPLIER DEVICE PACKAGE:  SOT-227

VGS(TH) (MAX) @ ID:  5.5V @ 8MA