CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  66A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 500V 66A (TC) 700W (TC) CHASSIS MOUNT SOT-227B

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  380NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  9890PF @ 25V

MANUFACTURER:  IXYS

MANUFACTURER PART NUMBER:  IXFN80N50

MANUFACTURER STANDARD LEAD TIME:  24 WEEKS

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-227-4, MINIBLOC

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  700W (TC)

RDS ON (MAX) @ ID, VGS:  55 MOHM @ 500MA, 10V

SERIES:  HIPERFET?

SUPPLIER DEVICE PACKAGE:  SOT-227B

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4.5V @ 8MA