IXTH1N200P3HV

Factory Authorized Line

IXYS

Electronic Component

IXTH1N200P3HV

N-CHANNEL 2000V 1A (TC) 125W (TC) THROUGH HOLE TO-247HV
Call for availability IXYS
Mfr Part # IXTH1N200P3HV
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-247-3 VARIANTPACKAGING:  TUBESTANDARD PACKAGE:  30SUPPLIER DEVICE PACKAGE:  TO-247HV
Contact Sales

Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 2000V 1A (TC) 125W (TC) THROUGH HOLE TO-247HV

DRAIN TO SOURCE VOLTAGE (VDSS):  2000V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  23.5NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  646PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  IXYS

MANUFACTURER PART NUMBER:  IXTH1N200P3HV

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3 VARIANT

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  125W (TC)

RDS ON (MAX) @ ID, VGS:  40 OHM @ 500MA, 10V

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  TO-247HV

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA