CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  50 V

DRAIN CURRENT-MAX (ABS) (ID):  130 MA

DRAIN CURRENT-MAX (ID):  130 MA

DRAIN-SOURCE ON RESISTANCE-MAX:  10 O

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JESD-30 CODE:  R-PDSO-G3

MANUFACTURER:  LRC LESHAN RADIO CO LTD

MANUFACTURER PART NUMBER:  LBSS84LT1G

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G3

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  225 MW

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON