CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  300 V

DRAIN CURRENT-MAX (ID):  175 MA

DRAIN-SOURCE ON RESISTANCE-MAX:  12 O

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  5 PF

JEDEC-95 CODE:  TO-92

JESD-30 CODE:  O-PBCY-W3

JESD-609 CODE:  E3

MANUFACTURER:  MICROCHIP TECHNOLOGY INC

MANUFACTURER PART NUMBER:  DN2530N3-G

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  3

OPERATING MODE:  DEPLETION MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  CYLINDRICAL, O-PBCY-W3

PACKAGE SHAPE:  ROUND

PACKAGE STYLE:  CYLINDRICAL

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  740 MW

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  NO

TERMINAL FINISH:  MATTE TIN

TERMINAL FORM:  WIRE

TERMINAL POSITION:  BOTTOM

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON