CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  135MA (TJ)

DETAILED DESCRIPTION:  N-CHANNEL 350V 135MA (TJ) 1.3W (TA) SURFACE MOUNT TO-243AA (SOT-89)

DRAIN TO SOURCE VOLTAGE (VDSS):  350V

FET FEATURE:  DEPLETION MODE

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  120PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  DN3135N8-G

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-243AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.3W (TA)

RDS ON (MAX) @ ID, VGS:  35 OHM @ 150MA, 0V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-243AA (SOT-89)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V