Electronic Component
DN3765K4-G
N-CHANNEL 650V 300MA (TJ) 2.5W (TA) SURFACE MOUNT TO-252-3Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 300MA (TJ)
DETAILED DESCRIPTION: N-CHANNEL 650V 300MA (TJ) 2.5W (TA) SURFACE MOUNT TO-252-3
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 0V
FET FEATURE: DEPLETION MODE
FET TYPE: N-CHANNEL
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 825PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: MICROCHIP TECHNOLOGY
MANUFACTURER PART NUMBER: DN3765K4-G
MOISTURE SENSITIVITY LEVEL (MSL): 3 (168 HOURS)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.5W (TA)
RDS ON (MAX) @ ID, VGS: 8 OHM @ 150MA, 0V
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: TO-252-3
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V





