CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  30MA (TJ)

DETAILED DESCRIPTION:  N-CHANNEL 500V 30MA (TJ) 740MW (TA) THROUGH HOLE TO-92-3

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  0V

FET FEATURE:  DEPLETION MODE

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  10PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  LND150N3-G

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA)

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  740MW (TA)

RDS ON (MAX) @ ID, VGS:  1000 OHM @ 500ΜA, 0V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-92-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

ALTERNATE PARTS:  LND150N3-G-P002 LND150N3-G-P003 LND150N3-G-P013 LND150N3-G-P014