CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  280MA (TJ)

DETAILED DESCRIPTION:  N-CHANNEL 60V 280MA (TJ) 360MW (TC) SURFACE MOUNT TO-236AB (SOT23)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  50PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  TN2106K1-G

MANUFACTURER STANDARD LEAD TIME:  5 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  360MW (TC)

RDS ON (MAX) @ ID, VGS:  2.5 OHM @ 500MA, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2V @ 1MA