CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  365MA (TJ)

DRAIN TO SOURCE VOLTAGE (VDSS):  350V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

INPUT CAPACITANCE (CISS) @ VDS:  200PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  TN2435N8-G

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-243AA

PACKAGING:  REEL

POWER - MAX:  1.6W

RDS ON (MAX) @ ID, VGS:  6 OHM @ 750MA, 10V

STANDARD PACKAGE:  2,000

SUPPLIER DEVICE PACKAGE:  TO-243AA (SOT-89)

VGS(TH) (MAX) @ ID:  2.5V @ 1MA