CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  215MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  250V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 250V 215MA (TA) 740MW (TA) THROUGH HOLE TO-92-3

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  110PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  TN5325N3-G

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

PACKAGE / CASE:  TO-226-3, TO-92-3 (TO-226AA)

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  740MW (TA)

RDS ON (MAX) @ ID, VGS:  7 OHM @ 1A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-92-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2V @ 1MA

ALTERNATE PARTS:  TN5325N3-G-P002