CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  110MA (TJ)

DRAIN TO SOURCE VOLTAGE (VDSS):  350V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  TRANSISTORS - FETS, MOSFETS - SINGLE

INPUT CAPACITANCE (CISS) @ VDS:  110PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  TN5335K1-G

MANUFACTURER STANDARD LEAD TIME:  10 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  360MW

RDS ON (MAX) @ ID, VGS:  15 OHM @ 200MA, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23 (TO-236AB)

VGS(TH) (MAX) @ ID:  2V @ 1MA