CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  120MA (TJ)

DRAIN TO SOURCE VOLTAGE (VDSS):  220V

EXPANDED DESCRIPTION:  P-CHANNEL 220V 120MA (TJ) 360MW (TA) SURFACE MOUNT TO-236AB (SOT23)

FET TYPE:  P-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  110PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  TP5322K1-G

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  360MW (TA)

RDS ON (MAX) @ ID, VGS:  12 OHM @ 200MA, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  TO-236AB (SOT23)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  2.4V @ 1MA