CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  750MA (TJ)

DETAILED DESCRIPTION:  P-CHANNEL 60V 750MA (TJ) 360MW (TC) THROUGH HOLE TO-39

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  5V, 10V

FET TYPE:  P-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  450PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROCHIP TECHNOLOGY

MANUFACTURER PART NUMBER:  VP2206N2

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-205AD, TO-39-3 METAL CAN

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  360MW (TC)

RDS ON (MAX) @ ID, VGS:  900 MOHM @ 3.5A, 10V

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  TO-39

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3.5V @ 10MA