CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  3A

CURRENT - REVERSE LEAKAGE @ VR:  2ΜA @ 600V

DETAILED DESCRIPTION:  DIODE STANDARD 600V 3A THROUGH HOLE

DIODE TYPE:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  1N5190

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE - JUNCTION:  -65°C ~ 175°C

PACKAGE / CASE:  B, AXIAL

PACKAGING:  BULK PACK

REVERSE RECOVERY TIME (TRR):  400NS

SPEED:  FAST RECOVERY =< 500NS, > 200MA (IO)

STANDARD PACKAGE:  1

VOLTAGE - DC REVERSE (VR) (MAX):  600V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.5V @ 9A