CAPACITANCE @ VR, F:  45PF @ 12V, 1MHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  1A

CURRENT - REVERSE LEAKAGE @ VR:  500NA @ 200V

DIODE TYPE:  STANDARD

EXPANDED DESCRIPTION:  DIODE STANDARD 200V 1A THROUGH HOLE

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  1N5615

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE - JUNCTION:  -65°C ~ 175°C

PACKAGE / CASE:  A, AXIAL

PACKAGING:  BULK PACK

REVERSE RECOVERY TIME (TRR):  150NS

SPEED:  FAST RECOVERY =< 500NS, > 200MA (IO)

STANDARD PACKAGE:  1

VOLTAGE - DC REVERSE (VR) (MAX):  200V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.6V @ 3A