CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  800MA

CURRENT - COLLECTOR CUTOFF (MAX):  50NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 150MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 50V 800MA 500MW THROUGH HOLE TO-18

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  2N2222AE3

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-206AA, TO-18-3 METAL CAN

POWER - MAX:  500MW

ROHS STATUS:  ROHS COMPLIANT

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  TO-18

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  1V @ 50MA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V