CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - DRAIN (IDSS) @ VDS (VGS=0):  100MA @ 15V

DETAILED DESCRIPTION:  JFET N-CHANNEL 30V 360MW THROUGH HOLE TO-18

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  18PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  2N4860

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-206AA, TO-18-3 METAL CAN

PACKAGING:  BULK PACK

POWER - MAX:  360MW

RESISTANCE - RDS(ON):  40 OHMS

SERIES:  MILITARY, MIL-PRF-19500/385

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-18

VOLTAGE - BREAKDOWN (V(BR)GSS):  30V

VOLTAGE - CUTOFF (VGS OFF) @ ID:  6V @ 500PA