CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  12A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 500V 12A (TC) 4W (TA), 150W (TC) THROUGH HOLE TO-3

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  120NC @ 10V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  2N6770

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-204AE

PACKAGING:  BULK PACK

POWER DISSIPATION (MAX):  4W (TA), 150W (TC)

RDS ON (MAX) @ ID, VGS:  500 MOHM @ 12A, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  TO-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA