CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  800MA

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 150MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR ARRAY 4 NPN (QUAD) 50V 800MA 400MW SURFACE MOUNT 14-FLATPACK

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  2N6990

MANUFACTURER STANDARD LEAD TIME:  12 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 200°C (TJ)

PACKAGE / CASE:  14-FLATPACK

PACKAGING:  BULK PACK

POWER - MAX:  400MW

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  14-FLATPACK

TRANSISTOR TYPE:  4 NPN (QUAD)

VCE SATURATION (MAX) @ IB, IC:  1V @ 50MA, 500MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V