CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  18A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 1000V 18A (TC) 520W (TC) CHASSIS MOUNT ISOTOP®

DRAIN TO SOURCE VOLTAGE (VDSS):  1000V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  7200PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APL1001J

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  CHASSIS MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  SOT-227-4, MINIBLOC

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  520W (TC)

RDS ON (MAX) @ ID, VGS:  600 MOHM @ 500MA, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  ISOTOP®

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 2.5MA