APL502B2G

Factory Authorized Line

MICROSEMI

Electronic Component

APL502B2G

N-CHANNEL 500V 58A (TC) 730W (TC) THROUGH HOLE T-MAX? [B2]
Call for availability MICROSEMI
Mfr Part # APL502B2G
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-247-3 VARIANTPACKAGING:  TUBESTANDARD PACKAGE:  1SUPPLIER DEVICE PACKAGE:  T-MAX? [B2]
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  58A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 500V 58A (TC) 730W (TC) THROUGH HOLE T-MAX? [B2]

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  15V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  9000PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APL502B2G

MANUFACTURER STANDARD LEAD TIME:  24 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3 VARIANT

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  730W (TC)

RDS ON (MAX) @ ID, VGS:  90 MOHM @ 29A, 12V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  T-MAX? [B2]

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 2.5MA