CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  10.5A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 1000V 10.5A (TC) 310W (TC) THROUGH HOLE TO-247AD

DRAIN TO SOURCE VOLTAGE (VDSS):  1000V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  130NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2950PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APT1001R1BN

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  310W (TC)

RDS ON (MAX) @ ID, VGS:  1.1 OHM @ 5.25A, 10V

SERIES:  POWER MOS IV®

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  TO-247AD

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4V @ 1MA