CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  56A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 500V 56A (TC) 780W (TC) THROUGH HOLE T-MAX? [B2]

DRAIN TO SOURCE VOLTAGE (VDSS):  500V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  220NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  8800PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  MICROSEMI CORPORATION

MANUFACTURER PART NUMBER:  APT56F50B2

MANUFACTURER STANDARD LEAD TIME:  21 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-247-3 VARIANT

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  780W (TC)

RDS ON (MAX) @ ID, VGS:  100 MOHM @ 28A, 10V

SERIES:  POWER MOS 8?

STANDARD PACKAGE:  30

SUPPLIER DEVICE PACKAGE:  T-MAX? [B2]

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 2.5MA